磁电子材料与器件研究组

Benlin Hu, Xiaojian Zhu, Xinxin Chen, Liang Pan, Shanshan Peng, Yuanzhao Wu, Jie Shang, Gang Liu, Qing Yan, and Run-Wei Li. A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching. J. Am. Chem. Soc. 134, 17408(2012);[PDF]

Benlin Hu, Ruge Quhe, Cao Chen, Fei Zhuge, Xiaojian Zhu, Shanshan Peng, Xinxin Chen, Liang Pan, Yuanzhao Wu, Wenge Zheng, Qing Yan, Jing Lu and Run–Wei Li. Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine. J. Mater. Chem., 22, 16422(2012);[PDF]

Xiaojian Zhu , Wenjing Su , Yiwei Liu , Benlin Hu , Liang Pan , Wei Lu , Jiandi Zhang , and Run-Wei Li. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory. Adv. Mater. 24 3941 (2012); [PDF]

Xiaojian Zhu, Jie Shang, Runw-Wei Li. Resistive switching effects in oxide sandwiched structures. Front. Mater. Sci. 2012, 6(3),183-206.[PDF]

Yiwei Liu, Zhihuan Yang, Huali Yang, Tao Zou, Yali Xie, Bin Chen, Young Sun, Qingfeng Zhan and Run-Wei Li. Anisotropic magnetoresistance in polycrystalline La0.67(Ca1−xSrx)0.33MnO3. J. Phys. D: Appl. Phys. 45 245001 (2012);[PDF]

Bin Chen, Zhenghu Zuo, Yiwei Liu, Qing-Feng Zhan, Yali Xie, Huali Yang, Guohong Dai, Zhixiang Li, Gaojie Xu, and Run-Wei Li. Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors. Appl. Phys. Lett. 100 193703 (2012) ;[PDF]

Zhenghu Zuo, Bin Chen, Qingfeng Zhan, Yiwei Liu, Huali Yang, Zhixiang Li, Gaojie Xu and Run-Wei Li. Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes. J. Phys. D: Appl. Phys. 45 185302 (2012) ;[PDF]

Guohong Dai, Qingfeng Zhan, Yiwei Liu, Huali Yang, Xiaoshan Zhang, Bin Chen and Run-Wei Li. Mechanically tunable magnetic properties of Fe81Ga19 films grown on flexible substrates. Appl. Phys. Lett. 100, 122407 (2012);[PDF]

Cheng Zou, Yuan-Fu Chen, Ping-Jian Li, Rui Fan, Bing Peng, Wen-Xu Zhang, Ze-Gao Wang, Xin Hao, Jing-Bo Liu, Wan-Li Zhang, Yan-Rong Li, and Run-Wei Li. Structure and properties of epitaxial perovskite ojpstmpstamp Pb(Zr0.52Ti0.48)O3/La0.7Sr0.3MnO3 heterostructures. J. Appl. Phys. 111, 07D718 (2012);[PDF]

Shanshan Peng, Fei Zhuge, Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen,and Run-Wei Li. Mechanism for resistive switching in an oxide-based electrochemical metallization memory. Appl. Phys. Lett.100.072101.(2012);[PDF]

Benlin Hu, Fei Zhuge, Xiaojian Zhu, Shanshan Peng, Xinxin Chen, Liang Pan, Qing Yan and Run-Wei Li. Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant. J. Mater. Chem., 22, 520(2012);[PDF]