磁电子材料与器件研究组

Xiuzhen Yu, Run-Wei Li, Toru Asaka, Kazuo Ishizuka, Koji Kimoto and Yoshio Matsui. Relationship between magnetic domain configuration and crystallographic orientation in a colossal magnetoresistive material. Journal of Electron Microscopy. 59, S95-S100. (2010);[PDF]

Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202. (2010);[PDF]

Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu, Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett. 97, 042101. (2010);[PDF]

F. Zhuge, W. Dai, C. L. He, A. Y. Wang, Y. W. Liu, M. Li, Y. H. Wu, P. Cui, and Run-Wei Li*. Nonvolatile resistive switching memory based on amorphous carbon. Appl. Phys. Lett. 96, 163505. (2010);[PDF]

D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, Run-Wei. Li, and Y.G. Zhao. Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing. Appl. Phys. Lett. 96, 072103. (2010);[PDF]

J. Wang, F. X. Hu, Run-Wei. Li, J. R. Sun, and B. G. Shen; Strong tensile strain induced charge/orbital ordering in (001)-La7/8Sr1/8MnO3 thin film on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3. Appl. Phys. Lett. 96, 052501. (2010);[PDF]

J. Yang, B. Li, J. Wang, L. Chen, Run-Wei.Li. A first-principles study of adhesion of Pt layers to the NiO(100) and IrO2(110) surfaces, J. Phys: Condens. Matt. 22, 015003. (2010);[PDF]